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| S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45 L A FULL R FEATURES: * PG = 16 dB min. at 100 W/30 MHz * High linear power output * IMD = -32 dBc max. at 100 W(PEP) * OmnigoldTM Metalization System E C O.125 NOM. C B B D G F E E H MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG JC 20 A 70 V 33 V 4.0 V 250 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.7 C/W DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cob GP C VSWR IMD VCE = 28 V IC = 50 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IE = 5.0 mA VCE = 28 V VCE = 5.0 V VCB = 28 V IC = 10 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 33 70 4.0 30 10 --16 270 100 --- UNITS V V V mA --pF dB % PIN = 2.5 W f = 30 MHz 65 :1 -32 --dBc POUT = 100 W (PEP) A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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